GaInAs gallium indium arsenide镓铟砷
gallium aluminum arsenide镓铝砷
gallium indium arsenide镓铟砷
indium gallium antimonide arsenide砷锑化镓铟
gallium indium arsenide phosphide镓铟砷磷
gallium m arsenide砷化镓
Gallium-Arsenide砷化钾;砷化镓
gallium-arsenide photocathode砷化镓光电阴极;砷化镓光
gallium indium arsenide antimonide镓铟砷锑
Gallium Arsenide(GaAs) is important compound semiconductor material. It has high electron transfer rate and direct transition energy band structure.
砷化镓(GaAs)是一种重要的化合物半导体材料，具有电子迁移率高、直接跃迁型能带结构等优点，适合于制造高频、高速、耐高温、抗辐射和发光器件。
参考来源 - 半绝缘砷化镓中微缺陷的研究